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Polycrystalline-Like Abrasive Behavior:
Engineered particle morphology and fracture behavior provide multiple active cutting points. -
Controlled Self-Sharpening:
Progressive micro-fracturing renews abrasive edges during use. -
Multi-Edge Particle Morphology:
Supports efficient material removal during lapping and polishing. -
Balanced Surface Performance:
Combines useful removal efficiency with controlled surface finishing. -
Cost-Performance Alternative:
Provides a practical option where full polycrystalline diamond is not required.
PLLM – Polycrystalline-like Diamond Powder
20+ Years Experience
Consistent Batch Quality
Customized Solutions
Product Overview
PLLM is a polycrystalline-like diamond micron powder developed as a cost-effective alternative for lapping and polishing processes that benefit from self-renewing abrasive action. Through controlled particle morphology and micro-fracture behavior, PLLM provides multiple active cutting points and progressive edge renewal, helping balance material removal efficiency, surface quality and processing cost.
Features
Specifications
| Diamond Type | Specialty Synthetic Diamond Micron Powder |
|---|---|
| Product Series | Polycrystalline-Like Diamond Powder |
| Grade | PLLM |
| Grade Direction | Polycrystalline-Like / Cost-Performance Grade |
| Particle Morphology | Irregular multi-edge particles |
| Fracture Behavior | Controlled micro-fracturing / self-sharpening |
| Selection Focus | Removal efficiency, surface quality and cost control |
| Typical Processes | Lapping / Polishing / Surface Finishing |
| Model | D10 (µm) | D50 (µm) | D95 (µm) | Application |
|---|---|---|---|---|
| PLLM 1/8 | ≥0.06 | 0.10–0.14 | ≤0.21 | End surface polishing of optical crystal, ultra-hard ceramic, wafer substrate, and metal. |
| PLLM 1/4 | ≥0.11 | 0.20–0.25 | ≤0.40 | |
| PLLM 0-1 | ≥0.40 | 0.48–0.55 | ≤0.72 | |
| PLLM 0-2 | ≥0.70 | 0.90–1.10 | ≤1.50 | |
| PLLM 2-4 | ≥1.80 | 2.70–3.00 | ≤4.50 | Lapping, rough polishing, and back thinning of sapphire and wafer substrate. |
| PLLM 3-6 | ≥2.80 | 4.00–4.40 | ≤7.00 | |
| PLLM 4-8 | ≥4.00 | 5.50–6.00 | ≤8.60 | |
| PLLM 5-9 | ≥4.70 | 6.30–7.00 | ≤10.00 | |
| PLLM 5-12 | ≥5.20 | 7.20–7.80 | ≤13.00 |
Applications
Semiconductor Material Lapping & Polishing
Suitable for efficient lapping and polishing of hard semiconductor-related materials.
- Sapphire substrate lapping and polishing
- Silicon carbide surface preparation
- Wafer back thinning and pre-polishing
Optics, Glass & Sapphire Polishing
Suitable for precision polishing requiring efficient removal and surface control.
- Optical glass lapping and polishing
- Sapphire surface refinement
- Crystal material polishing
Advanced Ceramic Lapping & Polishing
Suitable for controlled lapping and polishing of hard technical ceramics.
- Technical ceramic lapping
- Ceramic substrate polishing
- Ceramic substrate polishing